The Integrated Circuit Characterization & Analysis Program (IC-CAP) is the industry standard platform for DC and High Frequency measurement and modeling of semiconductor devices. IC-CAP 2009 continues to provide innovative modeling solutions by introducing two new turn-key modeling packages for extracting Corner Models for MOS devices and the BSIMSOI4 model for Silicon On Insulator (SOI) MOS devices. For the first time, IC-CAP 2009 adopts a new platform and user interface (UI) technology which dramatically improves the performance, responsiveness and provides a better look-and-feel of the product. In addition, this new release introduces several platform enhancements in the areas of PEL, graphics and instrument drivers.

New Corner Modeling Extraction Package

Unlike extracted models from measured data, which describe the behavior of a specific set of physical devices, corner models describe the model behavior when statistical process variations occur. This new extraction package enables modeling engineers to use Process Control Measurement (PCM) to generate corner models and automatically create libraries with corner information for the supported simulators. In addition, the package provides a comprehensive simulator suite which allows a final verification of the library by simulating the extracted library versus a variety of simulation conditions.

New BSIMSOI4 Extraction Package

This new MOS Modeling Package for the BSIMSOI4 completes a comprehensive offering of turn-key MOS Modeling Packages which includes BSIM3, BSIM4, PSP, HiSIM2.4 and HiSIM_HV. BSIMSOI4 is a compact model for SOI MOSFET devices developed by the department of EECS at UC Berkeley. The model was selected as the standard SOI MOSFET model by the Compact Modeling Council (CMC). The IC-CAP BSIMSOI4 Package uses the same powerful platform as the other MOS Packages and provides support for both DC and RF measurements and extraction of SOI MOSFET devices.