Crosslight APSYS 2018 APSYS, Advanced Physical Models of Semiconductor Devices, is based on 2D/3D finite element analysis of electrical, optical and thermal properties of compound semiconductor devices, with silicon as a special case. Emphasis has been placed on band structure engineering and quantum mechanical effects. Inclusion of various optical modules also makes this simulation package attractive for applications involving photosensitive or light emitting devices. Applications Diodes, transistors and various other types of silicon devices LEDs and OLEDs Solar cells Photodetectors (PD) High electron mobility transistors (HEMT) Heterojunction bipolar transistors (HBT) Resonant tunneling diodes (RTD) Quantum well infrared photodetectors (QWIP) Small MOS devices with strong quantum mechanical effects (Quantum-MOS) Power devices Features Restart from previous saved status Industry leading numerical convergence Extensive material macro library Hydrodynamic models for hot carriers Quantum tunneling & transport Thermionic emission model Heat transfer equations Deep level traps and trap dynamics Interface states Poole-Frenkel model Self-consistent QW calculations Temperature-dependent model Impact ionization